SI3424DV-T1-E3
MOSFET N-CH 30V 5A 6-TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3424DV-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C ambient temperature. The device exhibits a low on-resistance of 28mOhm maximum at 6.7A and 10V Vgs, contributing to reduced conduction losses. With a gate charge of 18nC maximum at 10V, it facilitates fast switching speeds. The SI3424DV-T1-E3 is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. Its typical applications span consumer electronics, industrial power supplies, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
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