SI3424BDV-T1-GE3
MOSFET N-CH 30V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI3424BDV-T1-GE3 is an N-Channel power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 8A (Tc). The low on-resistance of 28mOhm at 10Vgs and 7A Id minimizes conduction losses. With a gate charge (Qg) of 19.6 nC (max) at 10Vgs and input capacitance (Ciss) of 735 pF (max) at 15Vds, it offers efficient switching characteristics. The device is housed in a 6-TSOP package, suitable for surface mounting. Maximum power dissipation is rated at 2.1W (Ta) and 2.98W (Tc). This MOSFET is utilized in industrial, automotive, and consumer electronics sectors requiring robust power management solutions. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 2.98W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 15 V |
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