SI3424BDV-T1-E3
MOSFET N-CH 30V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI3424BDV-T1-E3 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 8A at 25°C (Tc). The low on-resistance specification of 28mOhm at 7A and 10V (Vgs) minimizes conduction losses. With a gate charge (Qg) of 19.6 nC maximum at 10V (Vgs) and input capacitance (Ciss) of 735 pF maximum at 15V (Vds), this MOSFET facilitates fast switching speeds. The device offers a maximum power dissipation of 2.1W (Ta) and 2.98W (Tc). Mounting is via surface mount in a 6-TSOP package. This Vishay Siliconix MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power management. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 2.98W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 15 V |
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