SI3410DV-T1-E3
MOSFET N-CH 30V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3410DV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C (Tc). With a low on-resistance of 19.5mOhm maximum at 5A and 10V Vgs, it minimizes conduction losses. The device is specified with a gate charge (Qg) of 33 nC maximum at 10V and an input capacitance (Ciss) of 1295 pF maximum at 15V. It supports a gate-source voltage range of ±20V and a threshold voltage of 3V maximum at 250µA. The SI3410DV-T1-E3 is housed in a 6-TSOP (SOT-23-6 Thin) surface-mount package, offering a power dissipation of 2W (Ta) or 4.1W (Tc). This MOSFET is suitable for use in power management and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 4.1W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1295 pF @ 15 V |
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