SI3407DV-T1-E3
MOSFET P-CH 20V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3407DV-T1-E3, offers a 20V drain-source voltage and 8A continuous drain current (Tc) at 25°C. This surface mount component, housed in a 6-TSOP package, features a maximum Rds(on) of 24mOhm at 7.5A and 4.5V Vgs. It operates within a temperature range of -55°C to 150°C (TJ) and supports drive voltages from 2.5V to 4.5V. Key parameters include a gate charge of 63 nC (max) at 10V Vgs and input capacitance of 1670 pF (max) at 10V Vds. Power dissipation is rated at 2W (Ta) and 4.2W (Tc). This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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