SI3129DV-T1-GE3
P-CHANNEL 80 V (D-S) MOSFET TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET SI3129DV-T1-GE3. This 80V device in a 6-TSOP package offers a continuous drain current of 3.8A (Ta) and 5.4A (Tc) with a maximum Rds(On) of 82.7mOhm at 3.8A and 10V. Featuring a low gate charge of 18 nC at 10V and input capacitance of 805 pF at 40V, it is suitable for applications requiring efficient power switching. The device supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a threshold voltage of 2.5V at 250µA. Power dissipation is rated at 2W (Ta) and 4.2W (Tc). Operating temperature range is -55°C to 150°C (TJ). Commonly utilized in automotive, industrial, and consumer electronics power management applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 82.7mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 40 V |
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