SI2392DS-T1-GE3
MOSFET N-CH 100V 3.1A SOT-23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2392DS-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.1A at 25°C (Tc). The low on-resistance of 126mOhm at 2A and 10V gate drive ensures minimal conduction losses. With a maximum gate charge (Qg) of 10.4 nC at 10V and input capacitance (Ciss) of 196 pF at 50V, it offers good switching performance. The device is housed in a compact SOT-23 (TO-236-3, SC-59) surface-mount package. Power dissipation is rated at 1.25W (Ta) and 2.5W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 50 V |
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