SI2392ADS-T1-GE3
MOSFET N-CH 100V 3.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2392ADS-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 3.1A at 25°C (Tc). With a maximum on-resistance of 126mOhm at 2A and 10V gate-source voltage, it is engineered for efficient power switching applications. The device is packaged in a SOT-23-3 (TO-236) surface-mount configuration, supplied on tape and reel. Key electrical parameters include a gate charge of 10.4 nC at 10V and input capacitance of 196 pF at 50V. It supports a gate-source voltage range of ±20V and has a threshold voltage of 3V at 250µA. Power dissipation is rated at 1.25W (Ta) and 2.5W (Tc). This MOSFET finds application in power management, industrial, and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 50 V |
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