SI2387DS-T1-GE3
P-CHANNEL -80V SOT-23, 164 M @ 1Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2387DS-T1-GE3 is a P-Channel TrenchFET® Gen IV Power MOSFET designed for efficient power switching applications. This device features a -80V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 2.1A at 25°C ambient or 3A under typical thermal conditions. The on-resistance (Rds On) is specified at a maximum of 164mOhm at 2.1A drain current and 10V gate-source voltage. The device offers a low gate charge (Qg) of 10.2 nC maximum at 10V Vgs and an input capacitance (Ciss) of 395 pF maximum at 40V Vds. With a maximum power dissipation of 1.3W (Ta) or 2.5W (Tc), it is suitable for applications requiring compact and reliable power control. The SI2387DS-T1-GE3 is housed in a SOT-23-3 (TO-236) surface-mount package and is supplied on tape and reel. This component finds utility in various sectors including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 164mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 40 V |
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