SI2372DS-T1-GE3
MOSFET N-CH 30V 4A/5.3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2372DS-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 4A at ambient temperature (Ta) and 5.3A at case temperature (Tc). The device offers a maximum on-resistance (Rds On) of 33mOhm at 3A and 10V Vgs. Power dissipation is rated at 960mW (Ta) and 1.7W (Tc). The packaged component is SOT-23-3 (TO-236) and is supplied on tape and reel. Typical applications for this MOSFET include power management and switching circuits in consumer electronics and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 288 pF @ 15 V |
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