SI2369BDS-T1-GE3
MOSFET P-CH 30V 5.6A/7.5A SOT23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 30 V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta), 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +16V, -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 745 pF @ 15 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
