SI2351DS-T1-GE3
MOSFET P-CH 20V 2.8A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2351DS-T1-GE3 is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 2.8 A (Tc). The on-resistance (Rds On) is specified at a maximum of 115 mOhm at 2.4 A and 4.5 V. Key parameters include a Gate Charge (Qg) of 5.1 nC (max) at 5 V and an input capacitance (Ciss) of 250 pF (max) at 10 V. The device utilizes Metal Oxide technology and has a threshold voltage (Vgs(th)) of 1.5 V (max) at 250 µA. The SI2351DS-T1-GE3 is supplied in a SOT-23-3 (TO-236) surface mount package, delivered in Cut Tape (CT). This component is suitable for use in power management, automotive, and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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