SI2351DS-T1-E3
MOSFET P-CH 20V 2.8A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI2351DS-T1-E3 is a P-Channel Power MOSFET designed for surface-mount applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.8A at 25°C (Tc). With a low on-resistance (Rds On) of 115mOhm at 2.4A and 4.5V Vgs, it offers efficient power switching. Key parameters include a gate charge (Qg) of 5.1 nC maximum at 5V Vgs and an input capacitance (Ciss) of 250 pF maximum at 10V Vds. The device is housed in a SOT-23-3 (TO-236) package and is supplied on cut tape. This MOSFET is suitable for use in various industrial and consumer electronics applications requiring compact, efficient power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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