SI2343DS-T1-GE3
MOSFET P-CH 30V 3.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2343DS-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a 30V Drain-Source voltage rating and a continuous drain current capability of 3.1A at 25°C ambient. The device exhibits a low on-resistance of 53mOhm maximum at 4A and 10V Vgs, with a threshold voltage of 3V. Key parameters include a gate charge of 21nC at 10V and input capacitance of 540pF at 15V Vds. The SI2343DS-T1-GE3 is housed in a SOT-23-3 (TO-236) surface-mount package, offering a maximum power dissipation of 750mW. This MOSFET is suitable for use in consumer electronics, industrial controls, and automotive systems where space-constrained, high-efficiency power management is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 15 V |
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