SI2343DS-T1-BE3
P-CHANNEL 30-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SI2343DS-T1-BE3, offers a 30V drain-source breakdown voltage and 3.1A continuous drain current at 25°C. This surface-mount device, housed in a SOT-23-3 (TO-236) package, features a low on-resistance of 53mOhm at 4A and 10V Vgs. Key electrical characteristics include a gate charge of 21 nC and input capacitance of 540 pF. The device operates across a wide temperature range of -55°C to 150°C. Its specifications make it suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 15 V |