SI2341DS-T1-GE3
MOSFET P-CH 30V 2.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2341DS-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2.5A at 25°C. The low Rds(on) of 72mOhm maximum at 2.8A and 10V gate drive ensures efficient power handling. With a Gate Charge (Qg) of 15 nC maximum at 10V and an Input Capacitance (Ciss) of 400 pF maximum at 15V, this MOSFET offers optimized switching performance. The component is housed in a SOT-23-3 (TO-236) surface-mount package, enabling compact board designs. Its maximum power dissipation is 710mW at 25°C. The SI2341DS-T1-GE3 is commonly utilized in power management, switching applications, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 15 V |
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