SI2341DS-T1-E3
MOSFET P-CH 30V 2.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2341DS-T1-E3 is a P-channel Power MOSFET designed for efficient power switching applications. This component features a 30 V drain-source voltage and a continuous drain current capability of 2.5 A at 25°C (Ta), with a maximum power dissipation of 710 mW (Ta). The device exhibits a low on-resistance of 72 mOhm at 2.8 A and 10 V Vgs, facilitated by its TrenchFET technology. Key electrical parameters include a gate charge of 15 nC (max) and input capacitance of 400 pF (max). The SI2341DS-T1-E3 is housed in a compact SOT-23-3 (TO-236) surface-mount package and operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in portable electronics, battery management systems, and power supply circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 15 V |
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