SI2337DS-T1-GE3
MOSFET P-CH 80V 2.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI2337DS-T1-GE3 is a P-channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 2.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 270mOhm at 1.2A and 10V, it offers low conduction losses. The device is packaged in a SOT-23-3 (TO-236) surface mount configuration, suitable for compact designs. Key specifications include a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 500pF at 40V. It operates within a temperature range of -50°C to 150°C (TJ). This component is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V |
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