SI2337DS-T1-E3
MOSFET P-CH 80V 2.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI2337DS-T1-E3, offers 80V drain-to-source voltage and 2.2A continuous drain current at 25°C (Tc). This surface-mount component, packaged in an SOT-23-3 (TO-236), features a maximum on-resistance of 270mOhm at 1.2A and 10V Vgs. Optimized for efficiency, it dissipates 760mW (Ta) or 2.5W (Tc). Key parameters include a gate charge of 17nC (Max) at 10V and input capacitance of 500pF (Max) at 40V. The device operates from -50°C to 150°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage of 4V (Max) at 250µA. This MOSFET is commonly utilized in power management and switching applications across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V |
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