SI2337DS-T1-BE3
P-CHANNEL 80-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SI2337DS-T1-BE3, offers 80V drain-to-source voltage and continuous drain current capabilities of 1.2A at ambient temperature and 2.2A at case temperature. This SOT-23-3 (TO-236) surface-mount device features a maximum power dissipation of 760mW (Ta) and 2.5W (Tc). It exhibits a maximum Rds(On) of 270mOhm at 1.2A and 10V gate drive. Key parameters include a Vgs(th) of 4V (max) at 250µA and a gate charge (Qg) of 17nC (max) at 10V. Typical applications include power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta), 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V |
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