SI2335DS-T1-GE3
MOSFET P-CH 12V 3.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI2335DS-T1-GE3. This device features a 12V Vds rating and a continuous drain current of 3.2A at 25°C. The Rds(On) is specified at a maximum of 51mOhm at 4A and 4.5V Vgs. Drive voltages range from 1.8V to 4.5V. The gate charge (Qg) is a maximum of 15 nC at 4.5V, with input capacitance (Ciss) reaching 1225 pF at 6V. Rated for 750mW power dissipation, it operates across a temperature range of -55°C to 150°C. Packaged in a SOT-23-3 (TO-236) surface-mount configuration, this component is supplied on tape and reel. The SI2335DS-T1-GE3 is utilized in applications such as power management and battery-operated devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V |
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