SI2335DS-T1-E3
MOSFET P-CH 12V 3.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2335DS-T1-E3 is a P-Channel TrenchFET® Power MOSFET designed for efficient power switching applications. It features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.2A at 25°C. The device offers a low on-resistance (Rds On) of 51mOhm maximum at 4A, 4.5V Vgs, enabling reduced conduction losses. With a gate charge (Qg) of 15nC maximum at 4.5V Vgs and input capacitance (Ciss) of 1225pF maximum at 6V, it supports fast switching performance. The MOSFET can be driven with gate-source voltages as low as 1.8V, with a maximum rated gate-source voltage of ±8V. Its 750mW maximum power dissipation (Ta) in the SOT-23-3 (TO-236) surface mount package makes it suitable for thermally constrained designs. This component is utilized in consumer electronics, industrial automation, and portable devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V |
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