SI2334DS-T1-GE3
MOSFET N-CH 30V 4.9A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI2334DS-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power management applications. This component features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 4.9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 44mOhm at 4.2A and 4.5V Vgs, it offers low conduction losses. The device supports a gate-source voltage (Vgs) range of ±8V and a threshold voltage (Vgs(th)) of 1V at 250µA. Gate charge (Qg) is specified at a maximum of 10nC at 4.5V Vgs, and input capacitance (Ciss) is 634pF maximum at 15V Vds. The SI2334DS-T1-GE3 is housed in a SOT-23-3 (TO-236) surface-mount package. Its power dissipation is rated at 1.3W (Ta) and 1.7W (Tc). This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 1.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 634 pF @ 15 V |