SI2333DS-T1-GE3
MOSFET P-CH 12V 4.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI2333DS-T1-GE3, offers a 12V drain-source voltage and a continuous drain current of 4.1A at 25°C. This surface-mount device, packaged in a SOT-23-3 (TO-236) configuration, features a low Rds(on) of 32mOhm at 5.3A and 4.5V Vgs. With a maximum power dissipation of 750mW (Ta), it is suitable for applications requiring efficient power switching. Key parameters include a typical gate charge of 18nC at 4.5V Vgs and an input capacitance of 1100pF at 6V Vds. Operating temperature range is -55°C to 150°C. This component is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V |
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