SI2333DS-T1-E3
MOSFET P-CH 12V 4.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2333DS-T1-E3 is a P-channel power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 4.1A at 25°C. The low on-resistance of 32mOhm is achieved at 5.3A and 4.5V Vgs, with a drive voltage range of 1.8V to 4.5V. Key parameters include a maximum Gate Charge (Qg) of 18 nC at 4.5V and an input capacitance (Ciss) of 1100 pF at 6V. The MOSFET is housed in a compact SOT-23-3 (TO-236) surface-mount package, offering a maximum power dissipation of 750mW. The operating temperature range is -55°C to 150°C. This component is suitable for use in consumer electronics, industrial automation, and power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V |
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