SI2333DS-T1-BE3
P-CHANNEL 12-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2333DS-T1-BE3 is a P-Channel MOSFET in a SOT-23-3 (TO-236) surface-mount package. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 4.1A at 25°C (Ta). The low on-resistance of 32mOhm is specified at 5.3A and 4.5V Vgs. Gate charge (Qg) is a maximum of 18nC at 4.5V, and input capacitance (Ciss) is a maximum of 1100pF at 6V Vds. Power dissipation is rated at 750mW (Ta). Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V |
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