SI2331DS-T1-GE3
MOSFET P-CH 12V 3.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2331DS-T1-GE3 is a P-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 12V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 3.2A at 25°C (Ta). The typical on-resistance (Rds On) is 48mOhm at 3.6A and 4.5V gate-source voltage (Vgs). With a maximum power dissipation of 710mW (Ta), it is suitable for compact designs. The MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, commonly found in consumer electronics, industrial controls, and automotive systems. Key parameters include a gate charge (Qg) of 14 nC at 4.5V Vgs and input capacitance (Ciss) of 780 pF at 6V Vds. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 6 V |
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