SI2327DS-T1-GE3
MOSFET P-CH 200V 380MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2327DS-T1-GE3 is a P-channel TrenchFET® MOSFET designed for efficient power switching applications. This device features a 200V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 380mA at 25°C ambient temperature, with a maximum power dissipation of 750mW (Ta). The Rds On is specified at a maximum of 2.35 Ohms at 500mA and 10V Vgs. It is packaged in a SOT-23-3 (TO-236-3) surface mount configuration, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 12 nC (max) at 10V and an Input Capacitance (Ciss) of 510 pF (max) at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.35Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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