SI2327DS-T1-E3
MOSFET P-CH 200V 380MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI2327DS-T1-E3, offers a 200V drain-source breakdown voltage and a continuous drain current of 380mA at 25°C (Ta). This device features a low on-resistance of 2.35 Ohms maximum at 500mA and 10V Vgs, with a gate charge of 12nC maximum at 10V. The P-Channel MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, designed for efficient thermal performance with a maximum power dissipation of 750mW at 25°C (Ta). Key electrical parameters include an input capacitance (Ciss) of 510pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 4.5V maximum at 250µA. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management circuits across various industrial and consumer electronics applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.35Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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