SI2325DS-T1-BE3
P-CHANNEL 150-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SI2325DS-T1-BE3, offers a 150V Drain-Source Voltage (Vdss) and a continuous drain current of 530mA at 25°C. This surface mount device, packaged in a SOT-23-3 (TO-236) configuration, features a maximum power dissipation of 750mW (Ta). The Rds On is specified at 1.2 Ohm maximum at 500mA, 10V. With a gate charge of 12 nC at 10V and input capacitance of 510 pF at 25V, this MOSFET is suitable for applications requiring efficient power switching. Its operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 530mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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