SI2324DS-T1-GE3
MOSFET N-CH 100V 2.3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 234mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.9V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V |
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