SI2324DS-T1-BE3
MOSFET N-CH 100V 2.3A SOT-23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2324DS-T1-BE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 1.6 A at 25°C ambient, increasing to 2.3 A at 25°C case temperature. The maximum power dissipation is 1.25 W (Ta) and 2.5 W (Tc). With a low on-resistance (Rds On) of 234 mOhm maximum at 1.5 A and 10 V, and a gate charge (Qg) of 10.4 nC maximum at 10 V, this MOSFET offers excellent switching performance. It operates from a drive voltage range of 4.5 V to 10 V and is rated for a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.8 V at 250 µA. Packaged in a standard SOT-23-3 (TO-236) surface mount configuration, this device is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust and efficient power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta), 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 234mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V |
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