SI2323DS-T1-GE3
MOSFET P-CH 20V 3.7A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI2323DS-T1-GE3, offers a 20V drain-source voltage rating and a continuous drain current of 3.7A at 25°C. This device features a low Rds(on) of 39mOhm at 4.7A and 4.5V Vgs, with a gate charge of 19nC at 4.5V. The input capacitance (Ciss) is a maximum of 1020pF at 10V. The SI2323DS-T1-GE3 is packaged in a SOT-23-3 (TO-236) surface-mount configuration with a maximum power dissipation of 750mW. Its operating temperature range is -55°C to 150°C (TJ). This component is utilized in various applications including consumer electronics and industrial control systems. Drive voltage options range from 1.8V to 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
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