SI2323DS-T1-E3
MOSFET P-CH 20V 3.7A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2323DS-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.7A at 25°C ambient temperature. The low on-resistance (Rds On) of 39mOhm at 4.7A and 4.5V gate-source voltage ensures minimal conduction losses. With a maximum power dissipation of 750mW (Ta), it is suitable for compact designs. The MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, ideal for automated assembly. Key electrical parameters include a gate charge (Qg) of 19 nC at 4.5V and input capacitance (Ciss) of 1020 pF at 10V. This component is commonly employed in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
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