SI2323DS-T1-BE3
P-CHANNEL 20-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number SI2323DS-T1-BE3, offers a 20V drain-source breakdown voltage with continuous drain current capability of 3.7A at 25°C. This device features a low on-resistance of 39mOhm at 4.7A and 4.5V Vgs, and a maximum power dissipation of 750mW. The gate threshold voltage is 1V at 250µA, with a maximum gate-source voltage of ±8V. Key capacitances include an input capacitance (Ciss) of 1020pF at 10V and gate charge (Qg) of 19nC at 4.5V. Designed for surface mounting within the SOT-23-3 (TO-236) package, this MOSFET operates across a temperature range of -55°C to 150°C. It is commonly utilized in applications such as power management, battery charging circuits, and portable electronics. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
