SI2323DS-T1
MOSFET P-CH 20V 3.7A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2323DS-T1 is a P-channel Power MOSFET designed for efficient power management applications. This device features a continuous drain current capability of 3.7A (Ta) at 25°C and a drain-to-source voltage (Vdss) of 20V. With a maximum on-resistance (Rds On) of 39mOhm at 4.7A and 4.5V, it offers low conduction losses. The MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, ideal for space-constrained designs. Key electrical characteristics include a gate charge (Qg) of 19 nC at 4.5V and input capacitance (Ciss) of 1020 pF at 10V. It operates across a temperature range of -55°C to 150°C. This component is suitable for use in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
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