SI2319DS-T1-BE3
P-CHANNEL 40-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, SI2319DS-T1-BE3, offers a 40V drain-source voltage and a continuous drain current of 2.3A at 25°C. This surface-mount device, packaged in a SOT-23-3 (TO-236) configuration, features a maximum power dissipation of 750mW (Ta). With a maximum Rds On of 82mOhm at 3A and 10V, it utilizes MOSFET technology. Key parameters include a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 470 pF at 20V. The device operates across a temperature range of -55°C to 150°C. This component is well-suited for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V |
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