SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Additional Information
Series: TrenchFET® Gen IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
Request a Quote
Clients Also Buy
SIS903DN-T1-GE3
MOSFET 2P-CH 20V 6A PPAK 1212
SISS65DN-T1-GE3
MOSFET P-CH 30V 25.9A/94A PPAK
SIR165DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
