SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI2319CDS-T1-GE3 is a P-Channel Power MOSFET from the TrenchFET® series, designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 4.4A at 25°C (Tc). The low on-resistance of 77mOhm maximum at 3.1A and 10V gate drive makes it suitable for demanding switching operations. It boasts a maximum power dissipation of 2.5W at 25°C (Tc) and 1.25W at 25°C (Ta). Key parameters include a gate charge (Qg) of 21 nC maximum at 10V and input capacitance (Ciss) of 595 pF maximum at 20V. The SI2319CDS-T1-GE3 is supplied in a SOT-23-3 (TO-236) surface mount package, available on tape and reel. This component finds application in sectors such as consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 595 pF @ 20 V |
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