SI2318DS-T1-E3
MOSFET N-CH 40V 3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2318DS-T1-E3 is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 750mW (Ta). The device offers a low on-resistance (Rds On) of 45mOhm at 3.9A and 10V Vgs, facilitated by its TrenchFET technology. Gate charge (Qg) is specified at a maximum of 15nC @ 10V, and input capacitance (Ciss) is 540pF max @ 20V. The SI2318DS-T1-E3 operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an SOT-23-3 (TO-236) surface-mount configuration. It is suitable for use in consumer electronics, industrial automation, and automotive systems requiring high-efficiency switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
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