SI2318DS-T1-BE3
N-CHANNEL 40-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2318DS-T1-BE3 is a N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 3A at 25°C ambient. The low on-resistance of 45mOhm at 3.9A and 10V gate drive ensures efficient power transfer. Operates with a gate-source voltage range of ±20V, and a threshold voltage of 3V at 250µA. Key parameters include a maximum gate charge of 15 nC and input capacitance of 540 pF at 20V. The device is supplied in a SOT-23-3 (TO-236) surface mount package, offering a maximum power dissipation of 750mW. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
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