SI2316DS-T1-GE3
MOSFET N-CH 30V 2.9A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2316DS-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.9A at 25°C. The low on-resistance, specified as 50mOhm maximum at 3.4A and 10V gate-source voltage, contributes to reduced conduction losses. With a maximum power dissipation of 700mW, this device is suitable for surface mount integration in compact designs. The SOT-23-3 (TO-236) package offers a small footprint for space-constrained layouts. Key electrical characteristics include a gate charge (Qg) of 7 nC maximum at 10V and input capacitance (Ciss) of 215 pF maximum at 15V. This Vishay Siliconix MOSFET is utilized in various industries, including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 15 V |
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