SI2316DS-T1-E3
MOSFET N-CH 30V 2.9A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2316DS-T1-E3 is an N-channel power MOSFET designed for efficient power management. This component features a 30V drain-source voltage and a continuous drain current capability of 2.9A at 25°C ambient. The SOT-23-3 (TO-236) package offers a compact surface-mount solution with a maximum power dissipation of 700mW. Key electrical characteristics include a low on-resistance of 50mOhm at 3.4A and 10V Vgs, and a gate charge of 7nC maximum at 10V Vgs. The device operates across a wide temperature range of -55°C to 150°C, making it suitable for demanding applications in industries such as consumer electronics and industrial automation. The Vishay Siliconix SI2316DS-T1-E3 is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 15 V |
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