SI2316BDS-T1-GE3
MOSFET N-CH 30V 4.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2316BDS-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4.5A at 25°C (Tc). The low on-resistance (Rds On) of 50mOhm at 3.9A and 10V Vgs contributes to reduced conduction losses. Key parameters include a maximum Gate Charge (Qg) of 9.6 nC at 10V Vgs and an input capacitance (Ciss) of 350 pF at 15V Vds. The MOSFET is housed in a compact SOT-23-3 (TO-236) surface mount package, suitable for high-density designs. Power dissipation is rated at 1.25W (Ta) and 1.66W (Tc). This component finds application in consumer electronics and industrial power control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 1.66W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |
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