SI2316BDS-T1-E3
MOSFET N-CH 30V 4.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI2316BDS-T1-E3 is a TrenchFET® series N-Channel Power MOSFET. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 50mOhm at 3.9A and 10V Vgs. It features a low gate charge of 9.6 nC maximum at 10V Vgs and input capacitance (Ciss) of 350 pF maximum at 15V Vds. The device is housed in a SOT-23-3 (TO-236) surface mount package. Power dissipation is rated at 1.25W (Ta) and 1.66W (Tc). Operating temperature range is from -55°C to 150°C. This component is commonly utilized in power management applications within industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 1.66W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |
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