SI2316BDS-T1-BE3
N-CHANNEL 30-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET, part number SI2316BDS-T1-BE3. This device is packaged in a SOT-23-3 (TO-236) for surface mounting. It features a continuous drain current handling of 3.9A at 25°C ambient and 4.5A at 25°C case temperature, with a maximum drain-to-source voltage of 30V. The Rds(on) is specified at a maximum of 50mOhm at 3.9A and 10V Vgs. Gate charge (Qg) is 9.6 nC at 10V, and input capacitance (Ciss) is a maximum of 350 pF at 15V. Power dissipation is rated at 1.25W (Ta) and 1.66W (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for automotive, industrial, and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta), 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 1.66W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |
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