SI2315BDS-T1-GE3
MOSFET P-CH 12V 3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2315BDS-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This device features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The Rds On is specified at a maximum of 50mOhm at 3.85A and 4.5V gate drive. With a maximum power dissipation of 750mW (Ta), it is suitable for moderate power handling. The MOSFET exhibits a typical gate charge (Qg) of 15 nC at 4.5V and input capacitance (Ciss) of 715 pF at 6V. It operates within a temperature range of -55°C to 150°C and is packaged in a SOT-23-3 (TO-236) surface-mount format, supplied on cut tape. This component is utilized in various industries including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.85A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF @ 6 V |
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