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SI2315BDS-T1-E3

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SI2315BDS-T1-E3

MOSFET P-CH 12V 3A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI2315BDS-T1-E3 is a P-channel MOSFET with a 12V drain-source voltage. This component offers a continuous drain current of 3A at 25°C and a maximum power dissipation of 750mW. It features a low Rds On of 50mOhm at 3.85A and 4.5V Vgs, with drive voltages ranging from 1.8V to 4.5V. The gate charge is specified at 15 nC maximum at 4.5V Vgs, and input capacitance is 715pF maximum at 6V Vds. The device operates across a temperature range of -55°C to 150°C and is available in a SOT-23-3 (TO-236) surface mount package, supplied in Digi-Reel®. This MOSFET is suitable for applications in consumer electronics and industrial equipment.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:
Technical Details:
PackagingDigi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 3.85A, 4.5V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds715 pF @ 6 V

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