SI2315BDS-T1-BE3
P-CHANNEL 1.8-V (G-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, SI2315BDS-T1-BE3, offers a 12V drain-source voltage and a continuous drain current of 3A at 25°C. This surface-mount device, packaged in a SOT-23-3 (TO-236) configuration, features a maximum on-resistance of 50mOhm at 3.85A and 4.5V Vgs. The device supports a gate-source drive voltage as low as 1.8V for its on-resistance specifications. Key parameters include a maximum gate charge of 15 nC at 4.5V and an input capacitance of 715 pF at 6V. With a power dissipation rating of 750mW (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics, industrial automation, and power management systems. The component is supplied in Digi-Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.85A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF @ 6 V |
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