SI2312BDS-T1-GE3
MOSFET N-CH 20V 3.9A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2312BDS-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component offers a 20V drain-source breakdown voltage and a continuous drain current capability of 3.9A at 25°C (Ta). The device features a maximum on-resistance (Rds On) of 31mOhm at 5A and 4.5V Vgs. It operates with drive voltages ranging from 1.8V to 4.5V and has a gate charge of 12 nC at 4.5V. With a maximum power dissipation of 750mW (Ta), it is packaged in a SOT-23-3 (TO-236) surface-mount configuration, supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
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